TIP31G, TIP31AG, TIP31BG,. Plastic Power Transistors. Designed for use in general purpose amplifier and switching applications.
Collector-Emitter Saturation Voltage – VCE(sat) = 1. Internal schematic diagram. Medium Power Linear Switching Applications. Absolute Maximum Ratings. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above . Current gain-bandwidth product fT . High Power Bipolar Transistor.
COMPLEMENTARY SILICON POWER. LINEAR AND SWITCHING INDUSTRIAL. Jedec TO-2plastic package. Epitaxial- Base NPN transistors mounted in.
They are intented for use in . Electrical Characteristics TC=25°C unless otherwise noted. Pulse Test: PW≤300µs, Duty Cycle≤. Check stock and pricing, view product specifications, and order online. Browse our latest bipolar-transistors offers. NPN SILICON POWER TRANSISTORS.
These parameters must be measured using pulse techniques, tp = 3µs, duty cycle ≤. Specifications are subject to change without notice. W at 25°C Case Temperature. Texas Instruments power, known more popularly by its acronym, TIP is series of bipolar junction transistors manufactured by Texas Instruments. MAXIMUM RATINGS: (TC=25°C unless otherwise noted).
View datasheets, stock and pricing, or find other GP BJT. The A, B, C, designation indicate different collector- base and collector-emitter voltage ratings. STMICROELECTRONICS products. Тепловые характеристики Параметр Обозначение Макс. Elektronische Bauelemente.
Any changes of specification will not be informed individually. A suffix of “-C” specifies halogen and lead free. Parameters and Characteristics.