Designed for general−purpose amplifier and low−speed switching applications . NPN Epitaxial Darlington Transistor. Medium Power Linear Switching Applications. Absolute Maximum Ratings.

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function .

These ratings are limiting values above which the serviceability of any semiconductor device . Low collector-emitter saturation voltage. Complementary power Darlington transistors. General purpose linear and switching. Ponte H com transistor (BC 337) e com CI L293D.

Com simulação no Proteus e teste com Arduino. Electrical Characteristics TC=25°C unless otherwise noted. TIP1is a Darlington pair NPN transistor. Pulse Test : PW≤300µs, Duty cycle ≤.

V (minimum) – TIP12 TIP126. Collector-Base Voltage : TIP120. ON SEMICONDUCTOR products. Browse our latest darlington-transistors offers. Emitter-Base Voltage (IC = 0).

Предназначены для применения в усилителях постоянного тока, преобразователях напряжения, ключевых схемах. Выпускаются в пластмассовом корпусе с жесткими выводами. Marco specialties says you can sub a 1for a 122. Just want to double check with you guys before I fry my board. Forum Topic by Pinitration.

Uкэ(max) 100V Iк(max) 5A Iк. View datasheets, stock and pricing, or find other Darlington BJT. Fairchild Semiconductor Corporation.

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